Method of manufacturing stacked semiconductor device
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United States of America Patent
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-
Feb 8, 2005
Issued Date -
N/A
app pub date -
Sep 5, 2003
filing date -
Mar 14, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Flux is supplied to the surface of each land by a flux supplying apparatus. A solder ball having a predetermined size is supplied onto a land by using a ball supplying apparatus. A memory IC is disposed on a logic IC and each of a plurality of external leads comes into contact with a predetermined position in each of a plurality of corresponding lands. By performing predetermined heat treatment, the solder ball is melted to bond each external lead and each land with each other. After that, the melted solder is cooled down, the bonded portion is formed, and a stacked semiconductor device in which the memory IC is stacked on the logic IC is completed. In such a manner, a stacked semiconductor device in which external leads of a semiconductor device body are bonded to electrodes on a substrate securely is obtained.
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