A 'chained implant' technique forms a body region in a trench gated transistor. In one embodiment, a succession of 'chained' implants can be performed at the same dose but different energies. In other embodiments different doses and energies can be used, and particularly, more than one dose can be used in a single device. This process produces a uniform body doping concentration and a steeper concentration gradient (at the body-drain junction), with a higher total body charge for a given threshold voltage, thereby reducing the vulnerability of the device to punchthrough breakdown. Additionally, the source-body junction does not, to a first order, affect the threshold voltage of the device, as it does in DMOS devices formed with conventional diffused body processes.
Please note there is up to 60 days of latency in this Status indicator for certain status conditions. You can obtain up-to-date Status indicator readings by ordering PAIR for the file.
An application with the status "Published" (which means it is pending) may be recently abandoned, but not yet updated to reflect its abandoned status. However, an application filed less than one year ago is unlikely to be abandoned.
A patent with the status "Granted" may be recently expired, but not yet updated to reflect its expired status. However, it is highly unlikely a patent less than 3.5 years old would be expired.
An application with the status "Abandoned" is almost always current, but there is a small chance it was recently revived and the status not yet updated.
This priority date is an estimated earliest
priority date and is purely an estimation. This date should not be
taken as legal conclusion. No representations are made as to the
accuracy of the date listed. Please consult a legal professional
before relying on this date.