Method of forming trench transistor with chained implanted body including a plurality of implantation with different energies

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7052963
APP PUB NO 20040191994A1
SERIAL NO

10767030

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A 'chained implant' technique forms a body region in a trench gated transistor. In one embodiment, a succession of 'chained' implants can be performed at the same dose but different energies. In other embodiments different doses and energies can be used, and particularly, more than one dose can be used in a single device. This process produces a uniform body doping concentration and a steeper concentration gradient (at the body-drain junction), with a higher total body charge for a given threshold voltage, thereby reducing the vulnerability of the device to punchthrough breakdown. Additionally, the source-body junction does not, to a first order, affect the threshold voltage of the device, as it does in DMOS devices formed with conventional diffused body processes.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
Advanced Analogic Technologies, Inc.SANTA CLARA, CA171

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Grabowski, Wayne Los Altos, CA 10 815
Williams, Richard K Cupertino, CA 314 10530

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
5430315 Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current 59 1994
 
GENERAL ELECTRIC COMPANY (2)
5514604 Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making 49 1995
5672889 Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making 42 1996
 
BASF CORPORATION (1)
7326738 Composition and process for forming a flexible polyurethane foam sealing device 5 2004
 
INTERNATIONAL RECTIFIER CORPORATION (1)
6054365 Process for filling deep trenches with polysilicon and oxide 12 1998
 
Siliconix Incorporated (3)
4767722 Method for making planar vertical channel DMOS structures 158 1986
4967245 Trench power MOSFET device 136 1988
* 6049108 Trench-gated MOSFET with bidirectional voltage clamping 247 1997
 
MICROSEMI CORPORATION (1)
5801417 Self-aligned power MOSFET device with recessed gate and source 158 1993
 
FUJITSU LIMITED (1)
4509249 Method for fabricating isolation region in semiconductor devices 50 1983
 
FAIRCHILD SEMICONDUCTOR CORPORATION (6)
5770878 Trench MOS gate device 133 1996
* 6429481 Field effect transistor and method of its manufacture 174 1997
* 6316806 Trench transistor with a self-aligned source 78 1999
6188105 High density MOS-gated power device and process for forming same 132 1999
* 6583010 Trench transistor with self-aligned source 28 2001
* 6534825 Power MOS device with improved gate charge performance 61 2002
 
FAIRCHILD KOREA SEMICONDUCTOR LTD. (1)
5918114 Method of forming vertical trench-gate semiconductor devices having self-aligned source and body regions 25 1997
 
MAXIM INTEGRATED PRODUCTS, INC. (1)
4876214 Method for fabricating an isolation region in a semiconductor substrate 20 1988
 
DENSO CORPORATION (1)
* 6114207 Method of producing a semiconductor device 12 1999
 
NATIONAL SEMICONDUCTOR CORPORATION (1)
5567634 Method of fabricating self-aligned contact trench DMOS transistors 148 1995
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
5298780 Semiconductor device and method of fabricating same 60 1992
5801408 Insulated gate semiconductor device and method of manufacturing the same 39 1996
 
TEXAS INSTRUMENTS INCORPORATED (1)
5569949 Area efficient high voltage MOSFETs with vertical RESURF drift regions 43 1995
 
KABUSHIKI KAISHA TOSHIBA (1)
* 5554862 Power semiconductor device 106 1994
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
6090700 Metallization method for forming interconnects in an integrated circuit 57 1996
 
AVIZA TECHNOLOGY LIMITED (1)
5527561 Method for filing substrate recesses using elevated temperature and pressure 57 1994
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
DONGBU ELECTRONICS CO., LTD. (1)
* 7338868 Method for forming gate oxide layer in semiconductor device 0 2004
 
INTERNATIONAL RECTIFIER CORPORATION (3)
* 7217976 Low temperature process and structures for polycide power MOSFET with ultra-shallow source 2 2005
* 2005/0173,760 Low temperature process and structures for polycide power MOSFET with ultra-shallow source 0 2005
* 2007/0111,446 LOW TEMPERATURE PROCESS AND STRUCTURES FOR POLYCIDE POWER MOSFET WITH ULTRA-SHALLOW SOURCE 3 2007
 
STMICROELECTRONICS S.R.L. (2)
* 9006063 Trench MOSFET 1 2013
* 2015/0001,615 OPTIMIZATION OF MANUFACTURING METHODOLOGY: P-CHANNEL TRENCH MOS WITH LOW VTH AND N-TYPE POLY 1 2013
 
TEXAS INSTRUMENTS INCORPORATED (3)
* 7141455 Method to manufacture LDMOS transistors with improved threshold voltage control 3 2003
* 2004/0106,236 Method to manufacture LDMOS transistors with improved threshold voltage control 3 2003
7696049 Method to manufacture LDMOS transistors with improved threshold voltage control 1 2006
 
ROHM CO., LTD. (2)
* 8476702 Semiconductor device 1 2008
* 2009/0096,018 SEMICONDUCTOR DEVICE 2 2008
 
Force-MOS Technology Corporation (2)
* 7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes 7 2007
* 2008/0258,224 Trenched MOSFETs with improved gate-drain (GD) clamp diodes 9 2007
 
NXP USA, INC. (2)
9368576 Methods of manufacturing trench semiconductor devices with edge termination structures 0 2012
9722070 Methods of manufacturing trench semiconductor devices with edge termination structures 0 2016
 
SII SEMICONDUCTOR CORPORATION (2)
* 8643093 Semiconductor device and method of manufacturing the same 0 2011
* 2012/0049,275 Semiconductor device and method of manufacturing the same 3 2011
* Cited By Examiner

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