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Abstract

A method of improving focused ion beam milling particularly suitable for uniformly removing multiple layers of conductor and dielectric, such as the removal of multiple layers consisting of dummy copper pads and SiO.sub.2 on a semiconductor device. Variable Pixel Milling is first used to more uniformly remove most of a layer of conductor and dielectric. The use of Variable Pixel Milling may also be used in conjunction with a technique whereby incoming ions pass through a sacrificial layer formed on the surface of the layer being removed in order to further increase uniformity of material removal. Focused ion beam sputtering in conjunction with an oxygen containing gas, such as H.sub.2 O vapor or oxygen, is then used to smooth out the trench floor before the next layer is removed.

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First Claim