Ceramic substrate for a semiconductor producing/examining device
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United States of America Patent
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app pub date -
Jan 20, 2004
filing date -
Mar 7, 2000
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Abandoned
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Abstract
It is an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.
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