Method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device
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United States of America Patent
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Issued Date -
Oct 21, 2004
app pub date -
Jun 18, 2003
filing date -
Jun 18, 2002
priority date (Note) -
Abandoned
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Abstract
A ferroelectric memory device wherein the memory cell includes a first and second electrode having at least one metal layer and possibly at least one metal oxide layer. The first electrode is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer if formed on the top of the first electrode layer and at least a second electrode is formed on the ferroelectric layer. The ferroelectric memory includes at least a first and a second set of respectively parallel electrodes, wherein the electrodes in a set are provided orthogonally to the electrodes of a nearest following set and with memory cells formed in a ferroelectric layer provided between successive electrode sets, such that the memory cells are defined in the crossings between the electrodes which contact the ferroelectric layer on each side thereof.
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