Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 11, 2006
Issued Date -
N/A
app pub date -
Apr 24, 2003
filing date -
Apr 24, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region or a first conductivity type, a buried silicon carbide region of a second conductivity type opposite to the first conductivity type and a second conductivity type well region in a first conductivity type silicon carbide layer. The source region and the buried silicon carbide region are formed utilizing a first window of the mask layer. Then, the well region is formed utilizing a second window of the mask layer, the second window being provided by a subsequent etch of the mask layer having the first window.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully