Semiconductor device and method of manufacturing the same
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United States of America Patent
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Issued Date -
Oct 28, 2004
app pub date -
Jun 17, 2003
filing date -
Jun 28, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
There are provided a first insulating film over a semiconductor substrate, a capacitor formed on the first insulating film and having a lower electrode, a ferroelectric film, and an upper electrode, a capacitor-protection insulating film formed on the capacitor to apply a tensile stress of more than 2.0.times.10.sup.9 dyn/cm.sup.2 to the capacitor, and a second insulating film formed on the capacitor-protection insulating film to apply a compressive stress of more than 2.6.times.10.sup.9 dyn/cm.sup.2 to the capacitor.
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