Method for fabricating complementary metal oxide semiconductor image sensor
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United States of America Patent
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Issued Date -
Nov 4, 2004
app pub date -
Dec 24, 2003
filing date -
Apr 29, 2003
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a method for fabricating a complementary metal oxide semiconductor image sensor. The method includes the steps of: forming a gate structure having a spacer and a gate on a substrate; and forming a buffer layer covering a surface of the substrate and the spacer and exposing a portion of a surface of the gate by using a selective etching process.
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