Co-sputter deposition of metal-doped chalcogenides
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 10, 2007
Issued Date -
N/A
app pub date -
Jun 29, 2004
filing date -
Jun 6, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (Ge.sub.xSe.sub.1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully