Method of analyzing a wafer for metal impurities
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United States of America Patent
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Issued Date -
Dec 2, 2004
app pub date -
Jan 15, 2004
filing date -
Jan 17, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for quantitatively analyzing a wafer for metal impurities is disclosed, wherein the wafer has first and second surfaces. The method includes heating the first surface of the wafer to diffuse the metal impurities to the second surface in an environment at least substantially free of contamination, cooling the first surface of the wafer, and quantitatively analyzing the second surface of the wafer for the metal impurities.
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