Importance

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Abstract

It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO.sub.2 or Si.sub.3N.sub.4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber and the side wall of a piping of an exhaust path or the like at a film forming step, in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming can also be lessened and a cost can also be reduced. In a CVD apparatus for supplying a reactive gas into a reaction chamber and forming a deposited film on a surface of abase material provided in the reaction chamber, an exhaust path for exhausting a gas through a pump from an inner part of the reaction chamber is provided with an exhaust gas recycling path for recycling the exhaust gas from a downstream side of the pump to an upstream side of the exhaust path, and furthermore, a plasma generating device is provided on the exhaust gas recycling path.

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First Claim