Method of forming insulating film improved in electric insulating property
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United States of America Patent
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May 18, 2004
filing date -
May 19, 2003
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Abstract
A method of forming an insulating film according to the present invention reacts a nitrogen containing gas with a compound composed of silicon and chlorine under the condition that the gas flow ratio of the compound to the nitrogen containing gas is lower than {fraction (1/30)} to form a silicon nitride film. In the present invention, by forming the silicon nitride film at the gas flow ratio lower than {fraction (1/30)}, an insulating film having this silicon nitride film is improved in electric insulating property, so that a smaller leak current flows therethrough.
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