Method for manufacturing semiconductor device
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United States of America Patent
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Apr 3, 2007
Grant Date -
Dec 30, 2004
app pub date -
Dec 18, 2003
filing date -
Jun 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.
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