Susceptor for epitaxial growth and epitaxial growth method
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United States of America Patent
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Issued Date -
Jan 6, 2005
app pub date -
Jan 15, 2004
filing date -
Dec 21, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about 1/2 the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm.sub.2 and the density of the through-holes is 0.25 to 25 per cm.sub.2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
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