Wafer processing using gaseous antistatic agent during drying phase to control charge build-up
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United States of America Patent
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Issued Date -
Jan 6, 2005
app pub date -
Jul 3, 2003
filing date -
Jul 3, 2003
priority date (Note) -
Abandoned
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Abstract
Described are methods of processing one or more semiconductor wafers wherein the one or more wafers are processed in the presence of a gaseous antistatic agent. The method generally comprises performing one or more chemical treatment, rinsing, and/or drying steps in the presence of a gaseous antistatic agent. Preferably, a gaseous antistatic agent is present during at least a portion of a drying step and more preferably, during at least a portion of both a rinsing step and a drying step. In one preferred embodiment, the gaseous antistatic agent comprises carbon dioxide.
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