Importance

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Abstract

The present invention provides a copper compound having a decomposition temperature in a range of 100.degree. C. to 300.degree. C. and including one unit or a plurality of connected units represented by the following Formula (1): [R.sup.1COO].sub.n[NH.sub.3].sub.mCuX.sup.1.sub.p (1) where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R.sup.1 respectively represent the following Formula (2), CH.sub.2X.sup.2, CH.sub.2X.sup.2(CHX.sup.2).sub.q, NH.sub.2, or H, and may be the same or different from each other, or n is 2 and two pieces of [R.sup.1COO] represent together the following Formula (3); R.sup.2, R.sup.3, and R.sup.4 are respectively CH.sub.2X.sup.2, CH.sub.2X.sup.2(CHX.sup.2).sub.-q, NH.sub.2, or H; R.sup.5 is --(CHX.sup.2).sub.r--; X.sup.2 is H, OH, or NH.sub.2; r is 0 to 4; q is 1 to 4; and X.sup.1 is NH.sub.4+, H.sub.2O, or solvent molecules 1 According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.

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First Claim