Low dose super deep source/drain implant
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United States of America Patent
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Feb 21, 2012
Grant Date -
Jan 6, 2005
app pub date -
Jul 22, 2004
filing date -
Aug 29, 2002
priority date (Note) -
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Abstract
A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
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