Transparent inter-metal dielectric stack for CMOS image sensors
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United States of America Patent
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Issued Date -
Jan 6, 2005
app pub date -
Jul 3, 2003
filing date -
Jul 3, 2003
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Abandoned
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Abstract
A transparent inter-metal dielectric utilized in a CMOS image sensor includes a flowlayer sandwiched between a base SiO.sub.2 layer and a cap SiO.sub.2 layer. The flowlayer is formed by reacting SiH.sub.4 and H.sub.2O.sub.2 using a shortened H.sub.2O.sub.2 stabilization time, using a reduced deposition pressure, and while maintaining the reaction chamber platen at a target value of approximately 1.degree. C.
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