Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
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United States of America Patent
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Jan 10, 2006
Grant Date -
Jan 20, 2005
app pub date -
Jul 16, 2003
filing date -
Jul 16, 2003
priority date (Note) -
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Abstract
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.
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