Gap tuning for surface micromachined structures in an epitaxial reactor
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United States of America Patent
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Mar 24, 2009
Grant Date -
Jan 20, 2005
app pub date -
Aug 12, 2004
filing date -
Dec 31, 2002
priority date (Note) -
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Abstract
A device includes a top layer having at least two opposing faces, and at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one of the at least two opposing faces, a combined thickness of the at least two epitaxially deposited layers tuning a gap between the at least two opposing faces.
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