[METHOD OF FABRICATING POLYSILICON FILM]
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United States of America Patent
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app pub date -
Apr 8, 2004
filing date -
Jul 24, 2003
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Abandoned
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Abstract
A method of fabricating polycrystalline silicon layer of TFT is provided. The method includes sequentially forming an insulating layer, a first amorphous silicon layer, and a cap layer on a substrate. A laser annealing is performed to transform the first amorphous silicon layer to a first polycrystalline silicon layer, wherein at least one hole is formed in the amorphous silicon layer during the laser annealing process. Thereafter, the cap layer is removed. A portion of the insulating layer exposed within the hole is removed to form a second opening. A second amorphous silicon layer is formed over the first polycrystalline silicon layer filling the second opening. Finally a second annealing is performed to transform the second amorphous silicon layer to a second polycrystalline silicon layer.
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