Monolithic amplifier with high-value, monolithically formed passive feedback resistor
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United States of America Patent
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Issued Date -
Feb 3, 2005
app pub date -
Jun 14, 2004
filing date -
Jun 11, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A monolithic amplifier that has a high-value passive feedback resistor. The passive feedback resistor is formed from arsenic implanted polysilicon, that has a sheet resistivity on the order of 1 G.OMEGA. per square, and is connected to form a resistor of at least 1 G.OMEGA., more preferably 7.5 G.OMEGA. or more. The resistor is connected as the feedback resistor of a cascode amplifier and a capacitor is formed in parallel with the feedback resistor. A low noise amplifier can therefore be formed that is DC coupled and uses a completely passive resistance feedback element.
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