Semiconductor device and method for fabricating the same
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United States of America Patent
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Jul 11, 2006
Grant Date -
Feb 10, 2005
app pub date -
Nov 7, 2003
filing date -
Aug 6, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact electrode. The epitaxial structure includes a plurality of epitaxial layers capable of emitting light and P-type contact layer. The P-type ohmic contact electrode includes a first nickel layer deposited on the epitaxial structure, a first platinum layer deposited on the first nickel layer, and a first gold layer deposited on the first platinum layer. According to the fabricating method of the light-emitting device, an epitaxial structure is first formed on the surface of a substrate, a P-type ohmic contact electrode is then formed on the epitaxial structure, and an N-type ohmic contact electrode is formed on the other surface of the substrate. Finally, an annealing process is performed at a temperature between 220.degree. C. and 330.degree. C.
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