Strain sensors based on nanowire piezoresistor wires and arrays
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United States of America Patent
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Dec 4, 2007
Grant Date -
Feb 17, 2005
app pub date -
Apr 16, 2004
filing date -
May 7, 2003
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Abstract
A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.
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