Importance

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Abstract

The invention relates to a method and a device for optically testing specific internal physical parameters of semiconductor components (12) of a certain thickness (L), comprising at least one light source (1) for emitting a monochromatic light beam (2) with a wavelength (.lambda.), to which the material of the semiconductor element (12) is at least partially transparent and comprising a beam splitter (8), for separating the light beam (2) into a reference beam (15) and a sample beam (16), and at least one detection system (41) for recording the two-dimensional images, which are generated by the interference of the light beam (20) reflected from the semiconductor clement with the reflected reference beam (25). According to the invention, the rear face (18) of the semiconductor element (12) to be tested faces the sample beam (16) and a charge device (74) is provided for emitting an external charge for the semiconductor element (12). In addition, the device is provided with a memory (81) for storing at least two interferometric images that have been recorded at intervals and with a device (133) for automatically comparing the interferometric images.

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First Claim