Isotropic polycrystalline silicon and method for producing same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 6, 2005
Issued Date -
N/A
app pub date -
Aug 13, 2003
filing date -
Aug 13, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- No Patent Citation Ranking to display
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully