Tilted cavity semiconductor optoelectronic device and method of making same
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United States of America Patent
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app pub date -
Sep 16, 2004
filing date -
Feb 12, 2002
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Abandoned
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Abstract
A novel class of semiconductor light-emitting devices, or 'tilted cavity light-emitting devices' is disclosed. The device includes at least one active element, generally placed within a cavity, with an active region generating an optical gain by injection of a current and two mirrors. The device generates optical modes that propagate in directions, which are tilted with respect to both the p-n junction plane and the direction normal to this plane. A light-emitting diode is also disclosed, where the cavity and the mirrors are designed such that transmission of generated optical power within a certain spectral range and within a certain interval of angles to the substrate is minimized. Transmission of optical power within a certain spectral range, which corresponds to the emission range of the light-emitting active medium and within a certain interval of angles out of the device, is optimized to achieve a required output power level.
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