Endpoint detection of plasma-assisted etch process
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United States of America Patent
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Issued Date -
Feb 24, 2005
app pub date -
Aug 20, 2003
filing date -
Aug 20, 2003
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for detecting endpoint of plasma-assisted etch process by monitoring a parameter of the etch process, such as an automatic matching network parameter, and detecting a predetermined change in the parameter signaling the endpoint. This novel endpoint detection method has advantages of, inter alia, simplicity and reliability, is very cost-effective and requires minimum change to the etch process system hardware. It is particularly useful in the manufacture of photomasks and products manufactured using photomasks.
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International Classification(s)
- C03C:CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREO....
- G01L:MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL ....
- G03C:PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES....
- G01R:MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC V....
- G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....
- C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....
- B44C:PRODUCING DECORATIVE EFFECTS
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