Processing apparatus
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United States of America Patent
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Issued Date -
Feb 24, 2005
app pub date -
May 12, 2004
filing date -
May 12, 2003
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The time period during which a wafer is stabilized to a predetermined temperature by increasing a thermal conductivity of a junction layer for bonding an electrostatic chuck layer and a support together, and the deterioration of the junction layer that is caused by active species generated by plasma is suppressed. Between the electrostatic chuck layer formed by sintering together a chuck electrode made of tungsten and an insulating layer made of alumina and the support, made of aluminum, for supporting the electrostatic chuck layer, the junction layer is provided to bond the electrostatic chuck layer and the support together. The junction layer is formed by impregnating a porous ceramic with a silicone-based adhesive resin. Further, rubber or a heat shrink tube made of a fluoric resin such as PFA is provided as a soft coating member so as to coat a side circumferential surface of the junction layer and the side circumferential surfaces of the electrostatic chuck layer and the support come into a tight contact with the heat shrink tube or rubber.
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