Film forming material, film forming method, and film
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United States of America Patent
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Issued Date -
Mar 3, 2005
app pub date -
Jul 22, 2004
filing date -
Aug 26, 2003
priority date (Note) -
Abandoned
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Abstract
A technique is provided of creating high-purity amorphous gate oxides film through a CVD process. In the technique of creating Hf--Si oxide films through the chemical vapor deposition process, Si(OR).sub.4 and Hf(NR'R').sub.4 are used.
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