Non-volatile memory structure
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United States of America Patent
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Jun 7, 2005
Grant Date -
Mar 17, 2005
app pub date -
Sep 17, 2003
filing date -
Sep 17, 2003
priority date (Note) -
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Abstract
A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from a floating gate, the programmable conductor is switched between its low and high resistive states to operate the flash memory cell. The resulting cell can be erased faster and has better endurance than a conventional flash memory cell.
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