Spacer chalcogenide memory method

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United States of America Patent

PATENT NO 7033856
SERIAL NO

10983375

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Abstract

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The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Hsinchu, TW 118 7064

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