Method and system for molecular charge storage field effect transistor
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United States of America Patent
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app pub date -
Nov 1, 2004
filing date -
Dec 14, 2001
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Abstract
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
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