Fast silicon photodiodes with high back surface reflectance in a wavelength range close to the bandgap
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United States of America Patent
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Issued Date -
Mar 31, 2005
app pub date -
Sep 26, 2003
filing date -
Sep 26, 2003
priority date (Note) -
Abandoned
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Abstract
Fast silicon photodiodes with high back surface reflectance in a wavelength range close to the bandgap, and methods of fabrication of such photodiodes. The photodiodes have a patterned oxide or nitride layer on the back surface covered by a metal layer that makes electrical contact with the substrate in a pattern complimentary to the pattern of the oxide or nitride layer. This provided high reflectivity over a large percentage of the back surface, while at the same time providing excellent electrical contact to the back surface.
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