Heterojunction bipolar transistor and manufacturing method making the same
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United States of America Patent
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Issued Date -
Apr 21, 2005
app pub date -
Oct 20, 2003
filing date -
Oct 20, 2003
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Abandoned
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Abstract
A method for improving a performance of a heterojunction bipolar transistor is provided. The method includes steps of providing a substrate; forming a first at least one semiconductor layer on the substrate; forming a second at least one semiconductor layer on the first at least one semiconductor layer; and inserting a thermal treatment process within the second at least one semiconductor layer so as to improve a performance of the heterojuntion bipolar transistor. Furthermore, the thermal treatment process is performed at a temperature ranged from 300.degree. C. to 800.degree. C.
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