Importance

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Abstract

A boosting circuit is provided that includes a reference voltage generating circuit unit to generate a reference voltage, a voltage boosting circuit to output a given boosting voltage, and a sensing circuit to sense a flash memory cell according to the reference voltage and the boosting voltage of the voltage boosting circuit. An output signal of the sensing circuit is changed depending on the boosting voltage of the voltage boosting circuit applied to a gate terminal of the flash memory cell. The boosting circuit also includes a switching circuit to apply the boosting voltage of the voltage boosting circuit or a power supply voltage depending on the boosting voltage of the voltage boosting circuit and the output signal of the sensing circuit.

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First Claim