Semiconductor device having a capacitor and method for the manufacture thereof
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United States of America Patent
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Issued Date -
May 12, 2005
app pub date -
Aug 4, 2003
filing date -
Jun 28, 1999
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device for use in a memory cell includes an active matrix provided with a silicon substrate, a transistor formed on the silicon substrate, a capacitor structure formed over the transistor, a metal interconnection for electrically connecting the capacitor structure to the transistor, a barrier layer formed on top of the metal interconnection and an inter-metal dielectric (IMD) layer formed on top of the barrier layer, wherein the barrier layer is made of a material such as Al.sub.2O.sub.3 or the like. The IMD layer is formed by using a plasma chemical vapor deposition (CVD) in a hydrogen rich atmosphere, wherein the barrier layer is used for preventing the capacitor structure from the hydrogen.
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