Evaluating a multi-layered structure for voids
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United States of America Patent
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Aug 8, 2006
Grant Date -
May 26, 2005
app pub date -
Nov 8, 2004
filing date -
Mar 1, 2002
priority date (Note) -
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Abstract
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.
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