Semiconductor device and method for manufacturing the same

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United States of America Patent

APP PUB NO 20050121713A1
SERIAL NO

11033257

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Abstract

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A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA72 HORIKAWA-CHO SAIWAI-KU KAWASAKI-SHI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eguchi, Kazuhiro Tokyo, JP 83 1047
Toshiba, Kabushiki Kaisha Tokyo, JP 1 3

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