Method of forming copper interconnections for semiconductor integrated circuits on a substrate
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United States of America Patent
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Issued Date -
Jun 9, 2005
app pub date -
Dec 27, 2004
filing date -
Dec 28, 2001
priority date (Note) -
Abandoned
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Abstract
A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate by forming a barrier layer or an adhesion layer or both having excellent adhesion property is disclosed. Ruthenium (Ru) and ruthenium alloys, and rhenium (Re) and rhenium alloys are proposed to use according to the present invention. Other metals proposed to use include nickel (Ni), platinum (Pt), osmium (Os), iridium (Ir) and their alloys, respectively.
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