Silicon solar cell and production method thereof
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United States of America Patent
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Feb 24, 2009
Grant Date -
Jun 23, 2005
app pub date -
Oct 8, 2004
filing date -
Oct 10, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate.The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.
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