EMI-EMC shield for silicon-based optical transceiver
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United States of America Patent
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Issued Date -
Jun 23, 2005
app pub date -
Dec 16, 2004
filing date -
Dec 18, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
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