Ceramic thin film on various substrates, and process for producing same
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United States of America Patent
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Issued Date -
Jun 30, 2005
app pub date -
Dec 3, 2004
filing date -
May 23, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A thin film of an amorphous silicon-based material on a substrate. The thin film has the property of any one of a carrier concentration of 10.sup.13 to 10.sup.18 cm.sup.-3 in a depletion zone next to the substrate, an electron mobility of 5 to 30 cm.sup.2V.sup.-1s.sup.-1, a dangling bond concentration of 10.sup.12 to 10.sup.19 cm.sup.-3, no solvent-related defects, or a residual hydrogen concentration of 0 to 25 atomic %. The thin film may be used to fabricate many devices such as solar cells, light-emitting diodes, transistors, photothyristors, and integrated monolithic devices on a single chip.
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