High polarization ferroelectric capacitors for integrated circuits
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United States of America Patent
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Issued Date -
Jul 7, 2005
app pub date -
Dec 30, 2003
filing date -
Dec 30, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
One aspect of the invention relates to a method of manufacturing an integrated circuit comprising forming an array of ferroelectric memory cells on a semiconductor substrate, heating the substrate to a temperature near a Curie temperature of the ferroelectric cores, and subjecting the substrate to a temperature program, whereby thermally induced stresses on the ferroelectric cores cause a switched polarization of the cores to increase by at least about 25% as the cores cool to about room temperature. Embodiments of the invention include metal filled vias of expanded cross-section above and below the ferroelectric cores, which increase the thermal stresses on the ferroelectic cores during cooling.
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