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Abstract

A gate dielectric containing LaAlO.sub.3 and method of fabricating a gate dielectric contained LaAlO.sub.3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO.sub.2. The LaAlO.sub.3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO.sub.3 gate dielectric is formed by evaporating Al.sub.2O.sub.3 at a given rate, evaporating La.sub.2O.sub.3 at another rate, and controlling the two rates to provide an amorphous film containing LaAlO.sub.3 on a transistor body region. The evaporation deposition of the LaAlO.sub.3 film is performed using two electron guns to evaporate dry pellets of Al.sub.2O.sub.3 and La.sub.2O.sub.3. The two rates for evaporating the materials are selectively chosen to provide a dielectric film composition having a predetermined dielectric constant ranging from the dielectric constant of an Al.sub.2O.sub.3 film to the dielectric constant of a La.sub.2O.sub.3 film. In addition to forming a LaAlO.sub.3 gate dielectric for a transistor, memory devices, and information handling devices such as computers include elements having a LaAlO.sub.3 gate electric with a thin equivalent oxide thickness.

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