Importance

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Abstract

A compact switching device for applications in semiconductor integrated circuits is disclosed. The switching device includes a conducting path of a first device between a first supply voltage and a common output, a conducting path of a second device between a second supply voltage and the common output, and a common input to control conduction in said first and second devices. Said first and second devices are constructed either as complementary IGFET devices or as Gated-FET devices or as mixed IGFET and Gated-FET devices. The conducting paths are constructed on very thin semiconductor films, and designed to comprise a fully depleted hub region for both N-type and P-type hub regions from the common input. Furthermore, the hub regions also contain full accumulation depths of majority carriers to enhance device characteristics. Due to these improved characteristics, the conducting paths of the first and second devices can merge to form a single geometry of said thin semiconductor film, facilitating constructions of very compact switches.

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First Claim