Memory element and its method of formation
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United States of America Patent
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May 29, 2007
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app pub date -
Nov 16, 2004
filing date -
Aug 29, 2002
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Abstract
A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
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