Method of forming resistance variable devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 25, 2008
Grant Date -
Jul 21, 2005
app pub date -
Mar 21, 2005
filing date -
Aug 29, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and A.sub.xB.sub.y, where 'B' is selected from S, Se and Te and mixtures thereof, and where 'A' comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to an HNO.sub.3 solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of 'A' or an oxide of 'B'. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully