Semiconductor device with element isolation region and method of fabricating the same
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United States of America Patent
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Issued Date -
Aug 4, 2005
app pub date -
Nov 22, 2004
filing date -
Nov 20, 2003
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a semiconductor substrate having an upper face, a plurality of trenches formed in the semiconductor substrate, an element isolating film embedded in each trench and having a top located higher than the upper face of the semiconductor substrate, a gate insulating film formed on the semiconductor substrate so as to be located between the element isolating films adjacent to each other, and a gate electrode formed on the gate insulating film and having a top located higher than the top of the element isolating film. The element isolating film has a recess formed on the top thereof so that the recess extends toward the semiconductor substrate.
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