Low temperature process and structures for polycide power MOSFET with ultra-shallow source
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United States of America Patent
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May 15, 2007
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app pub date -
Feb 8, 2005
filing date -
Feb 9, 2004
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Abstract
A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.
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